X-ray characterization of GaN/AlGaN multiple quantum wells for ultraviolet laser diodes

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Univ of Nottingham, Nottingham, United Kingdom [1 ]
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Appl Phys Lett | / 9卷 / 1004-1006期
关键词：
Atoms - Crystal structure - Interdiffusion (solids) - Interfaces (materials) - Lattice constants - Mathematical models - Molecular beam epitaxy - Semiconducting aluminum compounds - Semiconducting gallium compounds - Semiconductor quantum wells - Substrates - X ray diffraction analysis;
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摘要：
GaN/Al0.20Ga0.80N multiple quantum wells (MQWs) were grown by plasma-assisted MBE on an Al0.25Ga0.75N cladding layer simulating a laser diode structure. The MQWs were found to be coherent with a-lattice parameter of the underlying AlxGa1-xN layer. Further, Vegard's law was found to be not applicable for a 4000 angstrom AlxGa1-xN cladding layer. Up to the third-order satellite peaks were observed with relative intensities in very good agreement with theoretical predictions for a superlattice with abrupt interfaces.
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