Galvanostatic study of the electrodeposition of polypyrrole into porous silicon

被引：0

作者：

Moreno, J.D. ^{[1
]}

Marcos, M.L. ^{[2
]}

Agulló-Rueda, F. ^{[3
]}

Guerrero-Lemus, R. ^{[1
]}

Martín-Palma, R.J. ^{[1
]}

Martínez-Duart, J.M. ^{[1
]}

González-Velasco, J. ^{[2
]}

机构：

[1] Depto. de Fis. Aplicada C-12, Univ. Auton. de Madrid, 28049, Madrid, Spain

[2] Departamento de Química C-9, Univ. Auton. de Madrid, 28049, Madrid, Spain

[3] Inst. Cie. de Mat. de Madrid (CSIC), 28049 Madrid, Spain

来源：

Thin Solid Films | 1999年 / 348卷 / 01期

关键词：

Current density - Electric conductivity - Electrodeposition - Electropolymerization - Porous silicon - Raman spectroscopy - Surfaces;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Polypyrrole has been electrodeposited in the interior of the pores that form the porous silicon structure, and a very significant increase of the electrical conductivity of the samples has been observed. Micro-Raman spectroscopy experiments have allowed us to measure the amount of polymer as a function of the distance from the outer porous silicon surface. The degree of filling by the polymer has been found to be highly dependent on the electropolymerization conditions, particularly the current density applied.

引用

页码：152 / 156