Nonideal factors of ion-sensitive field-effect transistors with lead titanate gate

被引：0

作者：

Jan, Shiun-Sheng ^{[1
]}

Chen, Ying-Chung ^{[1
]}

Chou, Jung-Chuan ^{[2
]}

Cheng, Chien-Chuan ^{[3
]}

Lu, Chun-Te ^{[1
]}

机构：

[1] Department of Electrical Engineering, National Sun Yat-Sen University, Kaohsiung, Taiwan

[2] Inst. of Elec. and Information Eng., Natl. Yunlin Univ. of Sci. Technol., Touliu, Yunlin 640, Taiwan

[3] Department of Electronic Engineering, De-Lin Institute of Technology, Tucheng, Taipei, Taiwan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2002年 / 41卷 / 10期

关键词：

Hysteresis - Lead compounds - pH effects - Sol-gels - Thermal effects;

D O I：

10.1143/jjap.41.6297

中图分类号：

学科分类号：

摘要：

Sol-gel-derived lead titanate (PbTiO3) membranes have been successfully applied as H-ion-sensitive layers onto ion-sensitive field-effect transistors (ISFETs), yielding the quasi-Nernstian responses of 56-59 mV/pH. The effects of nonideal factors, such as stable response time, drift, hysteresis, lifetime and temperature, on the characteristics of the PbTiO3 gate ISFET have been investigated. Experimental results show a stable response time of 2-4 min, a drift of 0.5-1 mV/h and a hysteresis of 3-5 mV. Moreover, the PbTiO3 gate ISFET is long-lived, which has a lifetime of more than one year and a reduced pH sensitivity of about -10μV/pH-day. The thermal effect on the PbTiO3 gate ISFET can mainly be attributed to the buffer solution and semiconductor because the PbTiO3-sensitive membrane is unsusceptible to ambient temperature.

引用

页码：6297 / 6301