Trapping mechanisms in negative bias temperature stressed p-MOSFETs

被引:0
作者
Schlünder, Christian [1 ,2 ]
Brederlow, Ralf [1 ]
Wieczorek, Peter [3 ]
Dahl, Claus [4 ]
Holz, Jürgen [4 ]
Röhner, Michael [4 ]
Kessel, Sylvia [4 ]
Herold, Volker [1 ]
Goser, Karl [2 ]
Weber, Werner [1 ]
Thewes, Roland [1 ]
机构
[1] Infineon Technologies, Corporate Research, CPR 3, Otto-Hahn-Ring 6, D 81730 Munich, Germany
[2] University Dortmund, Lehrst. Bauelemente der Elektrotech., D 44227 Dortmund, Germany
[3] Infineon Technologies, ZUVDEV, Otto-Hahn-Ring 6, D 81730 Munich, Germany
[4] Infineon Technologies, PI M, Otto-Hahn-Ring 6, D 81730 Munich, Germany
来源
Microelectronics Reliability | / 39卷 / 6-7期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:821 / 826
相关论文
empty
未找到相关数据