Depositing Pb(Zr, Ti)O3 ferroelectric thin films on ITO glass substrate

被引：0

作者：

Yan, P.X. ^{[1
]}

Xie, L. ^{[1
]}

Li, Y. ^{[1
]}

Wang, J. ^{[1
]}

Jiang, S.R. ^{[1
]}

机构：

[1] Dept.of Physics, Lanzhou Univ., Lanzhou 730000, China

来源：

Kuei Suan Jen Hsueh Pao/ Journal of the Chinese Ceramic Society | 2000年 / 28卷 / 05期

关键词：

Annealing - Ferroelectric materials - Glass - Indium compounds - Lead compounds;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Pb(Zr, Ti)O3 ferroelectric thin films with perovskite structure were prepared on Sn-doped In2O3(ITO) substrates by R.F. reactive sputtering technique. The effects of annealing treatment and deposition parameters on the microstructure and properties of the thin films were investigated. The crystal structure, chemical states of elements, and surface morphologies of the thin films were characterized by XRD, XPS and SEM respectively. Average grain size is about 250 nm, and the grains are distributed uniformly with quadrilateral and triangle shapes. The ferroelectric properties of the thin films were measured. The annealing temperature and the oxygen ratio in Ar+O2 reactive atmosphere were found to have clear effects on the ferroelectric properties.

引用

页码：407 / 411

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