Preparation of lead titanate thin films using Langmuir-Blodgett method

被引:0
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作者
Sugai, Hiroshi [1 ]
Hoshi, Nobuo [1 ]
Iijima, Takashi [1 ]
Masumoto, Hiroshi [1 ]
机构
[1] Research Inst for Electric and, Magnetic Materials, Miyagi, Japan
来源
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers | 1998年 / 37卷 / 9 B期
关键词
Annealing - Deposition - Ferroelectric materials - Film preparation - Langmuir Blodgett films - Multilayers - Perovskite - Semiconducting lead compounds - Stearic acid - Thickness measurement - Ultraviolet radiation - X ray diffraction analysis;
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学科分类号
摘要
The Langmuir-Blodgett (LB) method is investigated as a process in the fabrication of ferroelectric thin films such as lead titanate. LB film was fabricated by depositing a monolayer prepared by stearic acid (C17H35COOH), lead chlorides (PbCl2) and titanium bis(ammonium lactato)([C3CH(O-)CO2NH4]2Ti(OH)2). As a conversion process from the LB film containing lead a nd titanium to an inorganic film, ultraviolet/ozone (UVO) treatment was found to be extremely applicable at a rate of about 4 min per monolayer. Subsequent rapid thermal annealing (RTA) resulted in a dense oxide thin film. The thickness of an oxide thin film converted from LB film consisting of 301 layers was approximately 30 nm. Hence, it is considered that approximately 0.1 nm of the oxide layer is equivalent to the thickness of the film deposited by each cycle. From an X-ray diffraction pattern of the oxide specimen, a well-defined perovskite peak structure was observed. These results demonstrate the potential application of LB deposition for the preparation of an inorganic oxide film such as lead titanate.
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页码:5118 / 5122
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