Mobility-lifetime product in microdoped amorphous silicon deposited by hot-wire chemical vapor deposition

被引：0

作者：

Conde, J.P. ^{[1
]}

Castanha, R. ^{[1
]}

Brogueira, P. ^{[1
]}

Chu, V. ^{[1
]}

机构：

[1] Inst Superior Tecnico, Lisboa, Portugal

来源：

Journal of Non-Crystalline Solids | / 227-230卷 / Pt A期

关键词：

Amorphous silicon - Boron compounds - Chemical vapor deposition - Computational methods - Doping (additives) - Electric charge - Electron transport properties - Fermi level - Hydrogenation - Semiconducting silicon - Substrates;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

We drift mobility deep trapping lifetime product, μτd of electrons, μτe, and holes, μτh, of hydrogenated amorphous silicon prepared using hot-wire chemical vapor deposition at substrate temperature of 200 °C was calculated using charge-collection as a function of applied voltage curves from time-of-flight measurements. μτd was observed to be a function of the position of the Fermi level. Microdoping with trimethylboron was used to go from undoped (slightly n-type, μτe>μτh) to slightly p-doped (μτh>μτe) films.

引用

页码：225 / 228