Analytical model for calculating exciton energies as measured in Zn1-xCdxSe/ZnSe and ZnSe/ZnSxSe1-x quantum wells

被引：0
|
作者：
Wulfes, A. [1 ]
Gutowski, J. [1 ]
Kurtz, E. [1 ]
Hommel, D. [1 ]
Scholl, M. [1 ]
Heuken, M. [1 ]
机构：
[1] Univ Bremen, Bremen, Germany
来源：
Materials Science Forum | 1995年 / 182-184卷
关键词：
Binding energy - Calculations - Composition effects - Emission spectroscopy - Excitons - Gas lasers - Optical properties - Photoluminescence - Semiconducting gallium arsenide - Semiconducting zinc compounds - Semiconductor device models - Semiconductor device structures;
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页码：191 / 194
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