High-frequency GaInP/GaAs heterojunction bipolar transistor with reduced base-collector capacitance using a selective buried sub-collector

被引：0
|
作者：
Columbia Univ, New York, United States [1 ]
机构：
来源：
IEEE Electron Device Lett | / 11卷 / 531-533期
关键词：
Number:; DAAH04-94-G-00.57; Acronym:; -; Sponsor:; ECS-93.19987; NSF; Sponsor: National Science Foundation;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] A high-frequency GaInP/GaAs heterojunction bipolar transistor with reduced base-collector capacitance using a selective buried sub-collector
    Yang, YF
    Hsu, CC
    Yang, ES
    Ou, HJ
    IEEE ELECTRON DEVICE LETTERS, 1996, 17 (11) : 531 - 533
  • [2] Fabrication and characteristics of a GaInP/GaAs heterojunction bipolar transistor using a selective buried sub-collector
    Yang, YF
    Hsu, CC
    Ou, HJ
    Huang, TC
    Yang, ES
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1997, 44 (12) : 2122 - 2127
  • [3] A GaInP/GaAs HBT with a selective buried sub-collector layer grown by MOCVD
    Yang, YF
    Hsu, CC
    Yang, ES
    1996 54TH ANNUAL DEVICE RESEARCH CONFERENCE DIGEST, 1996, : 34 - 35
  • [4] First fabrication of GaInAs/InP buried metal heterojunction bipolar transistor and reduction of base-collector capacitance
    Arai, Toshiki
    Harada, Yoshimichi
    Yamagami, Shigeharu
    Miyamoto, Yasuyuki
    Furuya, Kazuhito
    Japanese Journal of Applied Physics, Part 2: Letters, 2000, 39 (6 A):
  • [5] First fabrication of GaInAs/InP buried metal heterojunction bipolar transistor and reduction of base-collector capacitance
    Arai, T
    Harada, Y
    Yamagami, S
    Miyamoto, Y
    Furuya, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2000, 39 (6A): : L503 - L505
  • [6] AlGaAs/GaAs heterojunction bipolar transistors with reduced base-collector capacitance fabricated using selective metallorganic chemical vapor deposition
    Son, Jeong-Hwan
    Kim, Chang-Tae
    Hong, Song-Cheol
    Kwon, Young-Se
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1995, 34 (2 B): : 1085 - 1088
  • [7] ALGAAS/GAAS HBTS WITH REDUCED BASE-COLLECTOR CAPACITANCE BY USING BURIED SIO2 AND POLYCRYSTALLINE GAAS IN THE EXTRINSIC BASE AND COLLECTOR
    MOCHIZUKI, K
    NAKAMURA, T
    TANOUE, T
    MASUDA, H
    HORIUCHI, M
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (11) : 2124 - 2125
  • [8] Enhanced Bipolar Transistor Design for the Linearization of the Base-Collector Capacitance
    van der Meulen, J. M. M.
    de Vreede, L. C. N.
    2017 IEEE BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING (BCTM), 2017, : 126 - 129
  • [9] ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH REDUCED BASE-COLLECTOR CAPACITANCE FABRICATED USING SELECTIVE METALORGANIC CHEMICAL-VAPOR-DEPOSITION
    SON, JH
    KIM, CT
    HONG, SC
    KWON, YS
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (2B): : 1085 - 1088
  • [10] High-speed AlGaAs/GaAs HBTs with reduced base-collector capacitance
    Kim, W
    Lee, KH
    Chung, MC
    Kang, JC
    Kim, B
    ELECTRONICS LETTERS, 2001, 37 (20) : 1259 - 1261
12345