Effects of substrate temperature on properties of silicon dioxide thin-film deposited by direct photochemical vapor deposition

被引：0

作者：

Liu, Yurong ^{[1
]}

Du, Kaiying ^{[1
]}

Li, Guanqi ^{[1
]}

机构：

[1] Dept. of Appl. Phys., South China Univ. of Technol., Guangzhou 510640, China

来源：

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 2002年 / 23卷 / 08期

关键词：

Chemical vapor deposition - Electric properties - Temperature - Thin films;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The direct photo-CVD SiO2 thin films are deposited by using the SiH4 and O2 as the reaction gas and the low pressure Xe excited vacuum ultra-violet (VUV) as the optical source. With ellipsometry, Fourier transform infrared spectrometer (FTIR), capacitance-voltage (C-V) measurements, the properties of the thin films deposited at different substrate temperatures are studied. The result indicates that at the range of substrate temperature from 40 to 200°C, the refractive index of the deposited films is 1.40-1.46. There are no infrared absorption peaks related to the Si-H bonding and Si-OH bonding in the thin films. The substrate temperature has great influence on the properties of both the SiO2 films and the SiO2/Si interface. The fixed charge density of the SiO2-Si system is estimated from the C-V curve, the minimum value is about 1.73×1010 cm-2.

引用

页码：825 / 829