Negative magnetoresistance and localized magnetic states in semiconductors

被引：0
|
作者：
SHMARTSEV YUV
SHENDER EF
POLYANSKAYA TA
机构：
来源：
| 1971年 / 4卷 / 12期
关键词：
SEMICONDUCTORS; Impurities;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
A simple model is used to explain the appearance of negative magnetoresistance in semiconductors doped with nonmagnetic impurities. There is also a report of an experimental investigation of the negative magnetoresistance of n- type germanium doped with various impurities. A comparison of the theory with the experimental results yielded- the dependence of the amplitude of the negative magnetoresistance on the impurity concentration; the value of the localized magnetic moment and its dependence on the magnetic field, observed in samples with high impurity concentrations.
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页码：1990 / 1997
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