Transient enhanced diffusion of boron in the presence of dislocations produced by amorphizing implantation in silicon

被引：0

作者：

Uematsu, Masashi ^{[1
]}

机构：

[1] NTT Basic Research Lab, Kanagawa, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers | 1998年 / 37卷 / 11期

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摘要：

引用

页码：5866 / 5869

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