Se DOPING MECHANISMS IN MOCVD GaAs LAYERS.

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作者：
Asai, Hiromitsu [1 ]
Sugiura, Hideo [1 ]
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[1] NTT, Musashino Electrical, Communication Lab, Musashino, Jpn, NTT, Musashino Electrical Communication Lab, Musashino, Jpn
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| 1600年 / 24期
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