Experimental evaluation of microwave field-effect-transistor noise models

被引:0
|
作者
Ferdinand-Braun-Inst fuer, Hoehstfrequenztechnik, Berlin, Germany [1 ]
机构
来源
IEEE Trans Microwave Theory Tech | / 2卷 / 156-163期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [1] Experimental evaluation of microwave field-effect-transistor noise models
    Heymann, P
    Rudolph, M
    Prinzler, H
    Doerner, R
    Klapproth, L
    Böck, G
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1999, 47 (02) : 156 - 163
  • [2] PRECISION FIELD-EFFECT-TRANSISTOR GATE
    BELOV, YI
    SUKORO, YA
    INSTRUMENTS AND EXPERIMENTAL TECHNIQUES, 1979, 22 (01) : 117 - 118
  • [3] Cryogenic characterization of a ferroelectric field-effect-transistor
    Wang, Zheng
    Ying, Hanbin
    Chern, Winston
    Yu, Shimeng
    Mourigal, Martin
    Cressler, John D.
    Khan, Asif I.
    APPLIED PHYSICS LETTERS, 2020, 116 (04)
  • [4] Tunable piezoresistance and noise in gate-all-around nanowire field-effect-transistor
    Singh, Pushpapraj
    Park, Woo-Tae
    Miao, Jianmin
    Shao, Lichun
    Kotlanka, Rama Krishna
    Kwong, Dim-Lee
    APPLIED PHYSICS LETTERS, 2012, 100 (06)
  • [5] Ferroelectric Field-Effect-Transistor Integrated with Ferroelectrics Heterostructure
    Baek, Sungpyo
    Yoo, Hyun Ho
    Ju, Jae Hyeok
    Sriboriboon, Panithan
    Singh, Prashant
    Niu, Jingjie
    Park, Jin-Hong
    Shin, Changhwan
    Kim, Yunseok
    Lee, Sungjoo
    ADVANCED SCIENCE, 2022, 9 (21)
  • [6] Fabrication, Characterization, and Modeling of Field-Effect-Transistor Nanoribbon Biosensors
    Vogel, Eric M.
    CHEMICAL AND BIOLOGICAL SENSORS 11 -AND- MEMS-NEMS 11, 2014, 64 (01): : 159 - 165
  • [7] Addressable Nanowire Field-Effect-Transistor Biosensors With Local Backgates
    Baek, David J.
    Choi, Sung-Jin
    Ahn, Jae-Hyuk
    Kim, Jee-Yeon
    Choi, Yang-Kyu
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2012, 59 (09) : 2507 - 2511
  • [8] LOW-NOISE MICROWAVE GAAS FIELD-EFFECT TRANSISTOR
    BAUDET, P
    BINET, M
    BOCCONGIBOD, D
    PHILIPS TECHNICAL REVIEW, 1980, 39 (10): : 269 - 276
  • [9] Accurate Modeling Noise Characteristic of Microwave Field-Effect Transistor
    Xu, Yuehang
    Guo, Yunchuan
    Wu, Yunqiu
    Xu, Ruimin
    Yan, Bo
    APMC: 2008 ASIA PACIFIC MICROWAVE CONFERENCE (APMC 2008), VOLS 1-5, 2008, : 198 - 201
  • [10] Vertical-Pillar Ferroelectric Field-Effect-Transistor Memory
    Lee, Sangho
    Kim, Giuk
    Kim, Taeho
    Eom, Taehyong
    Jeon, Sanghun
    PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2022, 16 (10):