Thin tantalum pentoxide films deposited by photo-induced chemical vapor deposition using an injection liquid source

被引：0

作者：

Zhang, J.-Y. ^{[1
]}

Boyd, I.W. ^{[1
]}

Mooney, M.B. ^{[2
]}

Hurley, P.K. ^{[2
]}

Beechinor, J.T. ^{[2
]}

O'Sullivan, B.J. ^{[2
]}

Kelly, P.V. ^{[2
]}

Crean, G.M. ^{[2
]}

Senateur, J.-P. ^{[3
]}

Jimenez, C. ^{[3
]}

Paillous, M. ^{[3
]}

机构：

[1] Electron. and Electrical Engineering, University College London, Torrington Place, London WC1E 7JE, United Kingdom

[2] Natl. Microlectron. Research Centre, Lee Maltings, Prospect Row, Cork, Ireland

[3] Ecl. Natl. Sup. Phys. Grenoble, LMGP, Inst. Natl. Polytech. de Grenoble, B.P. 46, 38402 St. Martin d'Heres, France

来源：

Applied Physics A: Materials Science and Processing | 2000年 / 70卷 / 06期

关键词：

Composition - Excimer lasers - Metallorganic chemical vapor deposition - MOS devices - Oxides - Permittivity - Refractive index - Semiconducting silicon - Tantalum compounds - Thermal effects;

D O I：

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学科分类号：

摘要：

We report the growth of thin tantalum pentoxide films on Si (100) by ultraviolet-assisted injection liquid source (UVILS) chemical vapor deposition (CVD) at low temperatures (200-350°C). This new technique combines the intense radiation from an excimer lamp (λ = 222 nm) with a novel injection liquid source capable of delivering precisely controllable quantities of a liquid metalorganic precursor into the CVD chamber. The composition and optical properties of the oxides were determined using a variety of standard characterization methods. After optimization of the deposition parameters, the best layers were incorporated into simple MOS test structures to enable electrical characterization. Refractive index values of 2.09±0.07, fixed oxide charge content of 10 cm-2, breakdown fields higher than 2 MV/cm and dielectric constant values of 18-24 were readily achievable in the as-deposited films. These properties compare favorably with those for layers prepared by conventional thermal-CVD at significantly higher temperatures of 500°C.

引用

页码：647 / 649