Coarsening of End-of-Range defects in ion-implanted silicon annealed in neutral and oxidizing ambients

被引：0
|
作者：
Giles, L.F. [1 ]
Omri, M. [1 ]
de Mauduit, B. [1 ]
Claverie, A. [1 ]
Skarlatos, D. [1 ]
Tsoukalas, D. [1 ]
Nejim, A. [1 ]
机构：
[1] CEMES/CNRS, Toulouse, France
来源：
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms | 1999年 / 148卷 / 1-4期
关键词：
This work was part of the Rapid Project and was funded as ESPRIT 23481;
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摘要：
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页码：273 / 278
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