Experimental research on breakdown characteristics of thin gate oxide

被引：0
|
作者：
Liu, Hongxia
Hao, Yue
机构：
来源：
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 2000年 / 21卷 / 02期
关键词：
Thin gate oxide - Time dependent dielectric breakdown;
D O I：
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学科分类号：
摘要：
(Edited Abstract)
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页码：146 / 150
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