ORIENTATIONAL DISORDER IN AMORPHOUS SILICON PROBED BY XANES (X-RAY ABSORPTION NEAR EDGE STRUCTURE).

被引：0
|
作者：
Di Cicco, A. [1 ]
Bianconi, A. [1 ]
Benfatto, M. [1 ]
Marcelli, A. [1 ]
Natoli, C.R. [1 ]
Pianetta, P. [1 ]
Woicik, J. [1 ]
机构：
[1] Univ di Roma 'La Sapienza', Rome, Italy, Univ di Roma 'La Sapienza', Rome, Italy
来源：
Physica Scripta | 1988年 / 38卷 / 03期
关键词：
AMORPHOUS SILICON - ORIENTATIONAL DISORDER - X-RAY ABSORPTION NEAR EDGE FINE STRUCTURE - X-RAY ABSORPTION SPECTROSCOPY;
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页码：408 / 411
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