Preparation and characterization of ferroelectric BaTiO0.91(Hf0.5, Zr0.5)0.09O3 thin films by sol-gel process using titanium and zirconium alkoxides

被引：0

作者：

Thongrueng, Jirawat ^{[1
]}

Nishio, Keishi ^{[1
]}

Nagata, Kunihiro ^{[2
]}

Tsuchiya, Toshio ^{[1
]}

机构：

[1] Dept. of Mat. Science and Technology, Science University of Tokyo, Noda 278-8510, 2641, Yamazaki

[2] Department of Electronic Engineering, National Defense Academy, Yokosuka 239-8686, 1-10-20, Hashirimizu

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2000年 / 39卷 / 9 B期

关键词：

Double alkoxide - Hysteresis loop - Sol-gel process;

D O I：

10.1143/jjap.39.5393

中图分类号：

学科分类号：

摘要：

Sol-gel-derived BaTi0.91(Hf0.5, Zr0.5)0.09O3 (BTHZ-9) thin films have been successfully prepared on Pt and (Pt(111)/Ti/SiO2/Si(100) substrates by spin-coating and sintering from 550 to 900°C for 2 h in oxygen ambient. X-ray diffraction measurement indicated that the single perovskite phase of the BTHZ-9 thin films was obtained at heat treatment above 650°C. The formation temperature of the double-alkoxy-derived BTHZ-9 thin films was lower by at least 80°C than that of the films prepared from only titanium alkoxide. The microstructure of the films was observed by atomic force microscopy and scanning electron microscopy. The grain size of the films increased from 70 to 200 nm with increasing sintering temperature ranging from 650 to 850°C. The maximum peak for the dielectric constant, corresponding to the Curie point (87°C), was broad and lower in magnitude compared with that of the BTHZ-9 bulk ceramics. Tensile stresses resulting from the differences between thermal expansion coefficients of the substrate and the film caused poor electrical properties. BTHZ-9 thin films exhibited a well-saturated polarization-electric field hysteresis loop. The polarization coercive field for the 850-nm-thick BTHZ-9 thin film prepared on Pt/Ti/SiO2/Si substrate at 750°C were determined to be 8μC/cm2 and 15 kV/cm, respectively. Those of the BTHZ-9 thin film prepared on Pt substrate at 850°C were found to be 9 μC/cm2 and 18 kV/cm, respectively.

引用

页码：5393 / 5398

页数：5

共 19 条

[11] Masuda Y., Fujita S., Baba A., Masumoto H., Nagata K., Jpn. J. Appl. Phys., 36, (1997)
[12] Harizanov O.A., Mater. Letts., 34, (1998)
[13] Lines M.E., Glass A.M., Principles, Ferroelectric A.O., Materials R., (1977)
[14] Hoffman R.W., Physics of Thin Films, 3, (1996)
[15] Champbell D.S., Handbook of Thin Film Technology, (1970)
[16] Ruffa A.R., J. Mater. Sci., 15, (1980)
[17] Rika Nenpyo, (1993)
[18] Shaw T.M., Suo Z., Huang M., Liniger E., Laibowitz R.B., Baniecki J.D., Appl. Phys. Lett., 75, (1999)
[19] Frey M.H., Payne D.A., Phys. Rev. B, 54, (1996)

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