CAPLESS ANNEALING OF SILICON IMPLANTED SEMI-INSULATING InP.

被引：0
|
作者：
Qiao Yong
Lu Jianguo
Luo Chaowei
Shao Yongfu
Wang Weiyuan
机构：
来源：
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 1983年 / 4卷 / 06期
关键词：
SEMICONDUCTOR MATERIALS - Ion Implantation;
D O I：
暂无
中图分类号：
TM2 [电工材料]; TN [电子技术、通信技术];
学科分类号：
0805 ; 080502 ; 080801 ; 0809 ;
摘要：
The radiation damage created by Si** plus implantation into Fe-doped semi-insulating InP at room temperature has been annealed out after capless annealing at 650 degree C for 15 min, but sufficient electrical activation of implanted Si requires higher annealing temperature. The surface quality of InP samples annealed at 750 degree C for 30 min still shows well. The maximum sheet carrier concentrations for InP wafers implanted at 150 keV with 1 multiplied by 10**1**3, 5 multiplied by 10**1**3 and 1 multiplied by 10**1**4cm** minus **2 and capless annealed at 750 degree C for 15 min are 8 multiplied by 10**1**2, 3. 9 multiplied by 10**1**3 and 6. 3 multiplied by 10**1**3cm** minus **2 respectively. The n-type InP Hall mobility implanted with 1 multiplied by 10**1**3cm** minus **2 of Si** plus at 150 keV is 2100 cm**2/V. sec.
引用
收藏
页码：560 / 564
相关论文
共 50 条
  • [31] CAPLESS RAPID THERMAL ANNEALING OF SI+-IMPLANTED INP
    WOODHOUSE, JD
    GAIDIS, MC
    DONNELLY, JP
    ARMIENTO, CA
    APPLIED PHYSICS LETTERS, 1987, 51 (03) : 186 - 188
  • [32] Control of low Fe content in the preparation of semi-insulating InP by wafer annealing
    Univ Erlangen-Nuernberg, Erlangen, Germany
    J Electron Mater, 2 (93-97):
  • [33] Fabrication of undoped semi-insulating InP by multiple-step wafer annealing
    Uchida M.
    Kainosho K.
    Ohta M.
    Oda O.
    Journal of Electronic Materials, 1998, 27 (1) : 8 - 11
  • [34] Fabrication of undoped semi-insulating InP by multiple-step wafer annealing
    Uchida, M
    Kainosho, K
    Ohta, M
    Oda, O
    JOURNAL OF ELECTRONIC MATERIALS, 1998, 27 (01) : 8 - 11
  • [35] Electrical and optical properties of semi-insulating InP obtained by wafer and ingot annealing
    Zappettini, A
    Fornari, R
    Capelletti, R
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1997, 45 (1-3): : 147 - 151
  • [36] PHOTO-LUMINESCENCE FROM MG-IMPLANTED, EPITAXIAL, AND SEMI-INSULATING INP
    POMRENKE, GS
    PARK, YS
    HENGEHOLD, RL
    JOURNAL OF APPLIED PHYSICS, 1981, 52 (02) : 969 - 977
  • [37] Assessment of electrical and optical properties of heavily Fe-implanted semi-insulating InP
    Gasparotto, A
    Fraboni, B
    Priolo, F
    Enrichi, F
    Mazzone, A
    Scamarcio, G
    Troccoli, M
    Mosca, R
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2001, 80 (1-3): : 202 - 205
  • [38] Deep centers in undoped semi-insulating InP
    Fang, ZQ
    Look, DC
    Uchida, M
    Kainosho, K
    Oda, O
    JOURNAL OF ELECTRONIC MATERIALS, 1998, 27 (10) : L68 - L71
  • [39] IRON AND CHROMIUM REDISTRIBUTION IN SEMI-INSULATING INP
    OBERSTAR, JD
    STREETMAN, BG
    BAKER, JE
    WILLIAMS, P
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (08) : 1814 - 1817
  • [40] LATERAL PHOTODETECTORS ON SEMI-INSULATING INGAAS AND INP
    DIADIUK, V
    GROVES, SH
    APPLIED PHYSICS LETTERS, 1985, 46 (02) : 157 - 158
12345