CAPLESS ANNEALING OF SILICON IMPLANTED SEMI-INSULATING InP.

被引：0
|
作者：
Qiao Yong
Lu Jianguo
Luo Chaowei
Shao Yongfu
Wang Weiyuan
机构：
来源：
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 1983年 / 4卷 / 06期
关键词：
SEMICONDUCTOR MATERIALS - Ion Implantation;
D O I：
暂无
中图分类号：
TM2 [电工材料]; TN [电子技术、通信技术];
学科分类号：
0805 ; 080502 ; 080801 ; 0809 ;
摘要：
The radiation damage created by Si** plus implantation into Fe-doped semi-insulating InP at room temperature has been annealed out after capless annealing at 650 degree C for 15 min, but sufficient electrical activation of implanted Si requires higher annealing temperature. The surface quality of InP samples annealed at 750 degree C for 30 min still shows well. The maximum sheet carrier concentrations for InP wafers implanted at 150 keV with 1 multiplied by 10**1**3, 5 multiplied by 10**1**3 and 1 multiplied by 10**1**4cm** minus **2 and capless annealed at 750 degree C for 15 min are 8 multiplied by 10**1**2, 3. 9 multiplied by 10**1**3 and 6. 3 multiplied by 10**1**3cm** minus **2 respectively. The n-type InP Hall mobility implanted with 1 multiplied by 10**1**3cm** minus **2 of Si** plus at 150 keV is 2100 cm**2/V. sec.
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页码：560 / 564
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