Metalorganic chemical vapor deposition of PbTe films on GaAs substrates

被引：0
|
作者：
机构：
来源：
| 1600年 / 71期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [21] Unintentional Doping Mechanisms in GaAs/Si Films Grown by Metalorganic Chemical Vapor Deposition
    Wang Jun
    Deng Can
    Jia Zhi-Gang
    Wang Yi-Fan
    Wang Qi
    Huang Yong-Qing
    Ren Xiao-Min
    CHINESE PHYSICS LETTERS, 2013, 30 (11)
  • [22] Surface and optical properties of AlGaInP films grown on GaAs by metalorganic chemical vapor deposition
    Feng, ZC
    Lin, HC
    Zhao, J
    Yang, TR
    Ferguson, I
    THIN SOLID FILMS, 2006, 498 (1-2) : 167 - 173
  • [23] Growth of InP quantum dots on vicinal GaAs (100) substrates by metalorganic chemical vapor deposition
    Zhang, XB
    Heller, RD
    Noh, MS
    Dupuis, RD
    Walter, G
    Holonyak, N
    APPLIED PHYSICS LETTERS, 2003, 83 (03) : 476 - 478
  • [24] THE GROWTH OF ALGAAS-GAAS LASERS ON SI SUBSTRATES BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
    DUPUIS, RD
    PINZONE, CJ
    JOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) : 434 - 442
  • [25] Unintentional Doping Mechanisms in GaAs/Si Films Grown by Metalorganic Chemical Vapor Deposition
    王俊
    邓灿
    贾志刚
    王一帆
    王琦
    黄永清
    任晓敏
    Chinese Physics Letters, 2013, 30 (11) : 147 - 150
  • [26] Two kinds of crystalline state of InSb epilayers on GaAs substrates by metalorganic chemical vapor deposition
    Li, SW
    Ning, YQ
    Zhou, TM
    Jin, YX
    Tian, Y
    THIN SOLID FILMS, 1997, 298 (1-2) : 245 - 248
  • [27] DEGRADATION OF GAAS-LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION ON SI SUBSTRATES
    VANDERZIEL, JP
    DUPUIS, RD
    LOGAN, RA
    PINZONE, CJ
    APPLIED PHYSICS LETTERS, 1987, 51 (02) : 89 - 91
  • [28] A CONFOCAL PHOTOLUMINESCENCE STUDY OF METALORGANIC CHEMICAL-VAPOR-DEPOSITION GROWTH ON PATTERNED GAAS SUBSTRATES
    FONG, YC
    ARMOUR, EA
    HERSEE, SD
    BRUECK, SRJ
    JOURNAL OF APPLIED PHYSICS, 1994, 75 (06) : 3049 - 3055
  • [29] Microstructure of GaN films grown on Si(111) substrates by metalorganic chemical vapor deposition
    Hu, GQ
    Kong, X
    Wan, L
    Wang, YQ
    Duan, XF
    Lu, Y
    Liu, XL
    JOURNAL OF CRYSTAL GROWTH, 2003, 256 (3-4) : 416 - 423
  • [30] The content calculation of hexagonal phase inclusions in cubic GaN films on GaAs(001) substrates grown by metalorganic chemical vapor deposition
    Sun, XL
    Wang, YY
    Yang, H
    Li, JB
    Zheng, LX
    Xu, DP
    Wang, ZG
    THIN SOLID FILMS, 2000, 368 (02) : 237 - 240
12345