Low-voltage and low-current flash memory using source induced band-to-band tunneling hot electron injection to perform programming

被引：0

作者：

Pan, Liyang ^{[1
]}

Zhu, Jun ^{[1
]}

Zeng, Ying ^{[1
]}

Fu, Yuxia ^{[1
]}

Wu, Dong ^{[1
]}

Duan, Zhigang ^{[1
]}

Liu, Jianzhao ^{[1
]}

Sun, Lei ^{[1
]}

机构：

[1] Institute of Microelectronics, Tsinghua University

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2003年 / 42卷 / 4 B期

关键词：

Band-to-band; BBHE; CHE; Disturbance; Flash memory; Fowler-Nordheim; SIBE;

D O I：

10.1143/jjap.42.2028

中图分类号：

学科分类号：

摘要：

A novel n-channel flash memory cell, which uses source induced band-to-band hot electron injection (SIBE) to perform programming, is proposed in this paper. With the proposed programming method, the drain voltage and the control gate voltage can be reduced to as low as -3.6 V and 10 V with the assistance of the source voltage, and the programming speed can increase up to 10 μs. Moreover, the programming current is reduced to approximately 3.0μA, and a large read current of 64 μA is also realized. The simulation and the testing results show that the proposed flash cell features low programming voltage, low power, high programming efficiency, high read current, low bit-line leakage current, and good reliability.

引用

页码：2028 / 2032

页数：4

共 9 条

[1]

Lucero E.M., Challa N., Feilds J., IEEE Solid-State Circuits, SC-18, (1983)

[2]

Iwata Y., Momodomi M., Tanaka T., Oodaira H., Itoh Y., Nakayama R., Kirisawa R., Aritome S., Endoh T., Shirota R., Ohuchi K., Masuoka F., IEEE J. Solid-State Circuits, SC-25, (1990)

[3]

Ohnakado T., Mitsunaga K., Nunoshita M., Onoda H., Sakakibara K., Tsuji N., Ajika N., Hatanaka M., Miyoshi H., Int. Electron Device Meet. Tech. Dig., (1995)

[4]

Ohnakado T., Ajika N., Hayashi H., Takada H., Kobayashi K., Sugahara K., Satoh S., Miyoshi H., Symp. VLSI Technology Dig., (1988)

[5]

Lim F.R.L., Poe C.H., Yeh C.P., Wu P.H., Ni J., Hsu C., Int. Electron Device Meet. Tech. Dig., (1999)

[6]

Chen I.C., Kaya C., Paterson J., Int. Electron Device Meet. Tech. Dig., (1989)

[7]

Cerma F., Mielke N., Int. Proc. Reliability Physics Symp., (1988)

[8]

Aritome S., Shirota R., Hemink G., Endoh T., Masuoka F., Proc. IEEE, (1993)

[9]

San K.T., Kaya C., Ma T.P., IEEE Trans. Electron Devices, ED-42, (1995)

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