Homoepitaxial laser diodes grown on conducting and insulating ZnSe substrates

被引：0
|
作者：
Wenisch, H. [1 ]
Fehrer, M. [1 ]
Klude, M. [1 ]
Isemann, A. [1 ]
Großmann, V. [1 ]
Heinke, H. [1 ]
Ohkawa, K. [1 ,2 ]
Hommel, D. [1 ]
Prokesch, M. [3 ]
Rinas, U. [3 ]
Hartmann, H. [3 ]
机构：
[1] Inst. für Festkörperphysik, Univ. Bremen, Kufsteiner Str. N., Bremen, Germany
[2] Department of Applied Physics, Sci. Univ. Tokyo, Kagurazaka 1-3, S., Tokyo, Japan
[3] Inst. für Kristallzüchtung, Rudower Chaussee 6, D-12484, Berlin, Germany
来源：
Journal of Crystal Growth | 1999年 / 201卷
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页码：933 / 937
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