Homoepitaxial laser diodes grown on conducting and insulating ZnSe substrates

被引：0

作者：

Wenisch, H. ^{[1
]}

Fehrer, M. ^{[1
]}

Klude, M. ^{[1
]}

Isemann, A. ^{[1
]}

Großmann, V. ^{[1
]}

Heinke, H. ^{[1
]}

Ohkawa, K. ^{[1
,2
]}

Hommel, D. ^{[1
]}

Prokesch, M. ^{[3
]}

Rinas, U. ^{[3
]}

Hartmann, H. ^{[3
]}

机构：

[1] Inst. für Festkörperphysik, Univ. Bremen, Kufsteiner Str. N., Bremen, Germany

[2] Department of Applied Physics, Sci. Univ. Tokyo, Kagurazaka 1-3, S., Tokyo, Japan

[3] Inst. für Kristallzüchtung, Rudower Chaussee 6, D-12484, Berlin, Germany

来源：

Journal of Crystal Growth | 1999年 / 201卷

关键词：

D O I：

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中图分类号：

学科分类号：

摘要：

引用

页码：933 / 937

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