Ferroelectric properties of sol-gel derived Pb(Zr, Ti)O3 thin films

被引：0

作者：

Amanuma, Kazushi ^{[1
]}

Mori, Toru ^{[1
]}

Hase, Takashi ^{[1
]}

Sakuma, Toshiyuki ^{[1
]}

Ochi, Atsushi ^{[1
]}

Miyasaka, Yoichi ^{[1
]}

机构：

[1] NEC Corp, Kawasaki, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1993年 / 32卷 / 9 B期

关键词：

Capacitors - Coercive force - Electric current measurement - Ferroelectricity - Interfaces (materials) - Leakage currents - Microstructure - Polarization - Sol-gels - Synthesis (chemical) - Thin films - Titanium oxides;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Pb(Zr, Ti)O3 thin films of thickness ranging from 55 nm to 625 nm were synthesized on Pt/Ti/SiO2/Si substrates using a sol-gel process. The film thickness dependence of both microstructure and electrical properties was investigated. The synthesized films showed columnar structure. The diameter of each column was around 100 nm regardless of the film thickness. The 328 nm-thick film exhibited a dielectric constant (Ε) of 1000, remanent polarization (Pr) of 20 μC/cm2, and coercive field (Ec) of 47 kV/cm. Both Ε and Pr decreased and Ec increased with decreasing film thickness. This behavior is attributed to the existence of a low-dielectric-constant interface layer. The results of leakage current measurement were in good agreement with the model of space-charge-limited current.

引用

页码：4150 / 4153