Reaction Between Iron and Boron Introduced into Silicon by Ion Bombardment.

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作者：

Pavlov, P.V.

Kuril'chik, E.V.

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| 1978年 / 14卷 / 04期

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摘要：

The reaction between iron and implanted boron, due to the presence of defects induced by ion bombardment, at annealing temperature of 300 and 500 degree C leads to an intense process of formation of complexes of FeB type. The energy of complex formation is equal to 1. 4 plus or minus 0. 03 eV. The process of complex formation at 300 and 500 degree C increases the solubility of iron in the presence of implanted boron and reduces the electric activity of boron.

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