CRYSTAL GROWTH IN MICROGRAVITY FOR INDUSTRIAL APPLICATION.

被引：0

作者：

Saintonge, G. ^{[1
]}

Poirier, A. ^{[1
]}

机构：

[1] MPB Technologies Inc, Dorval, Que,, Can, MPB Technologies Inc, Dorval, Que, Can

来源：

Canadian Aeronautics and Space Journal | 1986年 / 32卷 / 04期

关键词：

SATELLITES - Zero Gravity Materials Processing - SEMICONDUCTOR MATERIALS - Growth;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Following a review of the possible applications of semiconductors grown in a microgravity environment, the author shows that certain problems in growing crystals from the melt on earth do not arise in a microgravity environment. In particular, crystal growth in a microgravity environment leads to the elimination of gravity-driven thermal convection in the melt. The crystal growth proceeds by diffusion-controlled solidification, resulting in highly homogeneous crystals. In certain cases, faster growth rates, flatter crystal facets, high doping levels and controlled stoichiometric homogeneity can be achieved. Unconventional approaches to crystal growth can be pursued with no need to consider melt containers and other constraints imposed by gravitational forces.

引用

页码：288 / 294