Trimethylgallium reactions on As-stabilized and Ga-stabilized GaAs(100) surfaces

被引：0

作者：

Sasaki, Masahiro ^{[1
]}

Kawakyu, Yoshito ^{[1
]}

Ishikawa, Hironori ^{[1
]}

Mashita, Masao ^{[1
]}

机构：

[1] Optoelectronics Technology Research, Lab, Ibaraki, Japan

来源：

Japanese Journal of Applied Physics, Part 2: Letters | 1992年 / 31卷 / 9 B期

关键词：

16;

D O I：

暂无

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学科分类号：

摘要：

引用

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[37] TRIMETHYLGALLIUM DISSOCIATIVE CHEMISORPTION ON GALLIUM-RICH GAAS(100) SURFACES [J].

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[38] Spin susceptibility of Ga-stabilized δ-Pu probed by 69Ga NMR -: art. no. 174410 [J].

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Gerashenko, A ;

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Ogloblichev, V ;

Verkhovskii, S ;

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[40] Anomalous bismuth-stabilized (2x1) reconstructions on GaAs(100) and InP(100) surfaces [J].

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Ahola-Tuomi, M. ;

Kokko, K. ;

Kuzmin, M. ;

Adell, J. ;

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Ropo, M. ;

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