Temperature-dependent lifetime distribution of the photoluminescence S-band in porous silicon

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[1] Mauckner, G.
[2] Thonke, K.
[3] Baier, T.
[4] Walter, T.
[5] Sauer, R.
来源：
Mauckner, G. | 1600年 / American Inst of Physics, Woodbury, NY, United States卷 / 75期
关键词：
Approximation theory - Band structure - Curve fitting - Electron energy levels - Electrons - Integration - Laplace transforms - Mathematical models - Porous materials - Quantum theory - Semiconducting silicon - Thermal effects;
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