Effect of hydrogen radicals on the reduction of carbon incorporation into GaAs grown by using trimethylgallium

被引:0
|
作者
机构
[1] Goto, Shigeo
[2] Nomura, Yasuhiko
[3] Morishita, Yoshitaka
[4] Katayama, Yoshifumi
[5] Ohno, Hideo
来源
Goto, Shigeo | 1600年 / JJAP, Minato-ku, Japan卷 / 33期
关键词
Semiconducting gallium arsenide;
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [31] Defect reduction in ZnSe grown by molecular beam epitaxy on GaAs substrates cleaned using atomic hydrogen
    Yu, ZH
    Buczkowski, SL
    Giles, NC
    Myers, TH
    APPLIED PHYSICS LETTERS, 1996, 69 (01) : 82 - 84
  • [32] Effect of hydrogen and nitrogen incorporation on the properties of tetrahedral amorphous carbon films grown using S bend filtered cathodic vacuum are process
    Panwar, O. S.
    Khan, Mohd Alim
    Bhagavanarayana, G.
    Dixit, P. N.
    Kumar, Sushil
    Rauthan, C. M. S.
    INDIAN JOURNAL OF PURE & APPLIED PHYSICS, 2008, 46 (11) : 797 - 805
  • [33] CHARACTERISTICS OF CARBON INCORPORATION IN GAAS GROWN BY GAS SOURCE MOLECULAR-BEAM EPITAXY
    GOTODA, M
    MARUNO, S
    MORISHITA, Y
    NOMURA, Y
    OGATA, H
    KURAMOTO, K
    KUROKI, H
    JOURNAL OF CRYSTAL GROWTH, 1990, 100 (1-2) : 5 - 10
  • [34] CARBON-REDUCTION IN TRIETHYLARSENIC-GROWN GAAS FILMS USING CHEMICALLY ACTIVATED ARSINE AS A COREAGENT
    SPECKMAN, DM
    WENDT, JP
    JOURNAL OF ELECTRONIC MATERIALS, 1990, 19 (05) : 495 - 499
  • [35] Study of the influence of the complex carbon-hydrogen in GaAs films grown by MOCVD
    Author, J. Q.
    Manrique-Moreno, S.
    Romero-Paredes, G.
    Galvan-Arellano, M.
    Pena-Sierra, R.
    2007 4TH INTERNATIONAL CONFERENCE ON ELECTRICAL AND ELECTRONICS ENGINEERING, 2007, : 230 - 232
  • [36] Dependence of carbon incorporation on crystallographic orientation of GaAs and AlGaAs grown by metalorganic chemical vapor deposition using CBr4
    Son, CS
    Kim, SI
    Kim, Y
    Park, YK
    Kim, EK
    Min, SK
    Choi, IH
    JOURNAL OF APPLIED PHYSICS, 1997, 82 (03) : 1205 - 1207
  • [37] EFFECT OF ASCL3 CONCENTRATION ON IMPURITY INCORPORATION IN VAPOR GROWN EPITAXIAL GAAS
    CAIRNS, B
    FAIRMAN, R
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (06) : C197 - &
  • [38] Effect of Sb Incorporation on Electroluminescence of InGaAsSbN Quantum Well Diodes Grown on GaAs Substrates
    Kawamura, Yuichi
    Nishino, Masatsugu
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2008, 47 (08) : 6302 - 6303
  • [39] REDUCTION OF BACKGATING EFFECT IN MBE-GROWN GAAS ALGAAS HEMTS
    YOKOYAMA, T
    SUZUKI, M
    YAMAMOTO, T
    SAITO, J
    ISHIKAWA, T
    IEEE ELECTRON DEVICE LETTERS, 1987, 8 (06) : 280 - 281
  • [40] The effect of unintentional carbon incorporation on the electrical properties of AlGaAs grown by MOCVD
    He, Zhifang
    Wang, Haizhu
    Wang, Quhui
    Fan, Jie
    Zou, Yonggang
    Ma, Xiaohui
    OPTICAL MATERIALS, 2020, 108