X-ray standing wave analysis of Al/GaAs/Si(111)

被引：0
|
作者：
机构：
[1] Kawamura, Tomoaki
[2] Oshima, Masaharu
[3] Fukuda, Yukio
[4] Ohmachi, Yoshiro
[5] Izumi, Koichi
[6] Ishikawa, Tetsuya
[7] Kikuta, Seishi
[8] Wei, Zhang Xiao
来源：
Kawamura, Tomoaki | 1600年 / 31期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] X-RAY STANDING WAVE ANALYSIS OF AL/GAAS/SI(111)
    KAWAMURA, T
    OSHIMA, M
    FUKUDA, Y
    OHMACHI, Y
    IZUMI, K
    ISHIKAWA, T
    KIKUTA, S
    ZHANG, XW
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1992, 31 (03): : 737 - 741
  • [2] X-RAY STANDING WAVE ANALYSIS OF GAAS/SI INTERFACE
    KAWAMURA, T
    TAKENAKA, H
    UNETA, M
    OSHIMA, M
    FUKUDA, Y
    OHMACHI, Y
    IZUMI, K
    ISHIKAWA, T
    KIKUTA, S
    ZHANG, XW
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1993, 32 (1B): : 622 - 625
  • [3] X-RAY STANDING WAVE ANALYSIS OF THE GAAS/SI INTERFACE
    KAWAMURA, T
    FUKUDA, Y
    OSHIMA, M
    OHMACHI, Y
    IZUMI, K
    HIRANO, K
    ISHIKAWA, T
    KIKUTA, S
    SURFACE SCIENCE, 1991, 251 : 185 - 190
  • [4] X-ray standing wave analysis of GaAs/Si interface
    Kawamura, Tomoaki
    Takenaka, Hisataka
    Uneta, Makoto
    Oshima, Masaharu
    Fukuda, Yukio
    Ohmachi, Yoshiro
    Izumi, Koichi
    Ishikawa, Tetsuya
    Kikuta, Seishi
    Zhang, Xiao Wei
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1993, 32 (1 B): : 622 - 625
  • [5] GEOMETRICAL STRUCTURE OF AN IRON EPILAYER ON SI(111) - AN X-RAY STANDING WAVE ANALYSIS
    BOULLIARD, JC
    CAPELLE, B
    FERRET, D
    LIFCHITZ, A
    MALGRANGE, C
    PETROFF, JF
    TACCOEN, A
    ZHENG, YL
    JOURNAL DE PHYSIQUE I, 1992, 2 (06): : 1215 - 1232
  • [6] LIBR ON SI(111) - AN X-RAY STANDING-WAVE MEASUREMENT
    GOG, T
    FOLLIS, GC
    DURBIN, SM
    APPLIED SURFACE SCIENCE, 1994, 81 (04) : 485 - 487
  • [7] X-RAY STANDING WAVE STUDIES OF GERMANIUM ADSORBED ON SI(111) SURFACES
    DEV, BN
    MATERLIK, G
    JOHNSON, RL
    KRANZ, W
    FUNKE, P
    SURFACE SCIENCE, 1986, 178 (1-3) : 1 - 9
  • [8] Lattice position of Si in GaAs determined by x-ray standing wave measurements
    1600, (73):
  • [9] X-RAY-STANDING-WAVE ANALYSIS OF PB ON EPITAXIAL GE(111) ON SI(111)
    ZEGENHAGEN, J
    FONTES, E
    PHYSICAL REVIEW B, 1992, 45 (23): : 13721 - 13724
  • [10] SURFACE-STRUCTURE ANALYSIS OF SULFUR-PASSIVATED GAAS(111)A AND GAAS(111)B BY X-RAY STANDING-WAVE TRIANGULATION
    SUGIYAMA, M
    MAEYAMA, S
    OSHIMA, M
    PHYSICAL REVIEW B, 1993, 48 (15): : 11037 - 11042
12345