GaAs/AlAs super-flat interfaces in GaAs/AlAs and GaAs/(GaAs)2 (AlAs)2 quantum wells grown on (4 1 1)A GaAs substrates by MBE

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Department of Physical Science, Grad. School of Engineering Science, Osaka University, Toyonaka, 560, Japan ^{[1
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Phys E | / 1-4卷 / 166-170期

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Number:; -; Acronym: [!text type='JS']JS[!/text]PS; Sponsor: Japan Society for the Promotion of Science;

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共 24 条

[1] Trion-electron scattering in GaAs/AlAs quantum wells
Technion - Israel Inst of Technology, Haifa, Israel
Surf Sci, 1-3 (443-446):
[2] Diffusion of free trions in mixed type GaAs/AlAs quantum wells
Dartmouth Coll, Hanover, Germany
Solid State Commun, 11 (743-747):
[3] Raman study of confined TO phonons in GaAs/AlAs superlattices grown on GaAs (311)A and B surfaces
Inst. of Semiconduct. Physics SB RAS, pr. ak. Lavrent'eva, 13, 630090, Novosibirsk, Russia
不详
Superlattices Microstruct, 1 (11-16):
[4] Coherent acoustic phonons in GaAs/AlAs superlattices
Bartels, A.
Dekorsy, T.
Kurz, H.
Köhler, K.
Physica B: Condensed Matter, 1999, 263 : 45 - 47
[5] GaAs/Al0.4Ga0.6As triple barrier resonant tunneling diodes with (4 1 1)A super-flat interfaces grown by MBE
Department of Physical Science, Grad. Sch. Eng. Sci., Osaka U., Osaka, Japan
不详
J Cryst Growth, (773-777):
[6] Effects of ZnSe and P insertion layers on band offsets at (100) GaAs/AlAs interfaces
Univ of Tokyo, Tokyo, Japan
Appl Surf Sci, (222-226):
[7] Exciton localization in GaAs/AlAs superlattices grown on high-index oriented surfaces
Marega, Jr., E.
Libardi, A.L.
Lubyshev, D.I.
Gonzalez-Borrero, P.P.
Basmaji, P.
Microelectronic Engineering, 1998, 43-44 : 295 - 299
[8] Coherent dynamics of zone-folded acoustic phonons in GaAs/AlAs superlattices
Univ of Tsukuba, Ibaraki, Japan
J Lumin, (564-566):
[9] Elastic strains in GaAs/AlAs quantum dots studied by high resolution x-ray diffraction
Masaryk Univ, Brno, Czech Republic
Solid State Electron, 1-8 (373-377):
[10] Long resonator micromachined tunable GaAs-AlAs Fabry-Perot filter
Technische Hochschule Darmstadt, Darmstadt, Germany
IEEE Photonics Technol Lett, 9 (1235-1237):

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