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- [1] ARC induced gate oxide breakdown in plasma etching process MICROELECTRONIC MANUFACTURING YIELD, RELIABILITY, AND FAILURE ANALYSIS III, 1997, 3216 : 154 - 159
- [3] Plasma charging induced gate oxide damage during metal etching and ashing 1996 1ST INTERNATIONAL SYMPOSIUM ON PLASMA PROCESS-INDUCED DAMAGE, 1996, : 113 - 116
- [4] Leakage current due to plasma induced damage in thin gate oxide MOS transistors 1997 2ND INTERNATIONAL SYMPOSIUM ON PLASMA PROCESS-INDUCED DAMAGE, 1997, : 29 - 32
- [5] Correlation between hot carrier stress, oxide breakdown and gate leakage current for monitoring plasma processing induced damage on gate oxide PROCEEDINGS OF THE 9TH INTERNATIONAL SYMPOSIUM ON THE PHYSICAL & FAILURE ANALYSIS OF INTEGRATED CIRCUITS, 2002, : 242 - 245
- [6] Correlation between hot carrier stress, oxide breakdown and gate leakage current for monitoring plasma processing induced damage on gate oxide 2002 7TH INTERNATIONAL SYMPOSIUM ON PLASMA- AND PROCESS-INDUCED DAMAGE, 2002, : 45 - 48
- [7] Effect of plasma dry etching on gate leakage of recessed AlGaN/GaN HEMTs Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 2007, 28 (11): : 1777 - 1781
- [10] Gate oxide punching thru mechanism in plasma dry etching Science in China Series E: Technological Sciences, 2008, 51 : 1990 - 1994