Reduction of base resistance of SiGe/Si HBT via ion implantation and side-wall oxide self-aligned technique

被引：0
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作者：
Xu, Chen [1 ]
Zhang, Jingyan [1 ]
Zhao, Lixin [1 ]
Deng, Jun [1 ]
Tao, Changbao [1 ]
Gao, Guo [1 ]
Du, Jinyu [1 ]
Luo, Ji [1 ]
Zou, Deshu [1 ]
Chen, Jianxin [1 ]
Shen, Guangdi [1 ]
机构：
[1] Beijing Polytechnic Univ, Beijing, China
来源：
International Conference on Solid-State and Integrated Circuit Technology Proceedings | 1998年
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页码：776 / 779
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