Molecular dynamics simulation of atomic layer etching of silicon

被引:0
|
作者
机构
来源
| 1600年 / American Inst of Physics, Woodbury, NY, USA卷 / 13期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [1] MOLECULAR-DYNAMICS SIMULATION OF ATOMIC LAYER ETCHING OF SILICON
    ATHAVALE, SD
    ECONOMOU, DJ
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1995, 13 (03): : 966 - 971
  • [2] Molecular dynamics study of silicon atomic layer etching by chorine gas and argon ions
    Vella, Joseph R.
    Humbird, David
    Graves, David B.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2022, 40 (02):
  • [3] Molecular dynamics simulation of fluorine ion etching of silicon
    Chiba, S
    Aoki, T
    Matsuo, J
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2001, 180 : 317 - 321
  • [4] Molecular dynamics simulations of silicon nitride atomic layer etching with Ar, Kr, and Xe ion irradiations
    Tercero, Jomar U.
    Isobe, Michiro
    Karahashi, Kazuhiro
    Hamaguchi, Satoshi
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2024, 63 (07)
  • [5] Molecular dynamics simulations of silicon nitride atomic layer etching with Ar, Kr, and Xe ion irradiations
    Tercero, Jomar U.
    Isobe, Michiro
    Karahashi, Kazuhiro
    Hamaguchi, Satoshi
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2024, 63 (07):
  • [6] Atomic layer etching of porous silicon
    Libon, IH
    Voelkmann, C
    PetrovaKoch, V
    Koch, F
    ADVANCES IN MICROCRYSTALLINE AND NANOCRYSTALLINE SEMICONDUCTORS - 1996, 1997, 452 : 511 - 516
  • [7] Realization of atomic layer etching of silicon
    Athavale, SD
    Economou, DJ
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (06): : 3702 - 3705
  • [8] Silicon anisotropic wet etching simulation using molecular dynamics
    Kakinaga, T
    Hatai, A
    Tabata, O
    Isono, Y
    Transducers '05, Digest of Technical Papers, Vols 1 and 2, 2005, : 816 - 819
  • [9] Molecular dynamics simulation of silicon and silicon dioxide etching by energetic halogen beams
    Ohta, H
    Hamaguchi, S
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2001, 19 (05): : 2373 - 2381
  • [10] Dynamics of plasma atomic layer etching: Molecular dynamics simulations and optical emission spectroscopy
    Vella, Joseph R.
    Hao, Qinzhen
    Donnelly, Vincent M.
    Graves, David B.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2023, 41 (06):