Anisotropic etching of a Novalak-based polymer at cryogenic temperature

被引：0
|
作者：
IBM Almaden Research Cent, San Jose, United States [1 ]
机构：
来源：
J Electrochem Soc | / 3卷 / 1008-1013期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [41] Fabrication of AlGaInP circular ring laser resonators by excimer-laser-assisted etching at cryogenic temperature
    Shih, Ming Chang
    Wang, Shih Chang
    Japanese Journal of Applied Physics, 2008, 47 (4 PART 2): : 2957 - 2960
  • [42] Study of Schottky Diodes Based on an Array of Silicon Wires Obtained by Cryogenic Dry Etching
    Baranov, A., I
    Kudryashov, D. A.
    Uvarov, A., V
    Morozov, I. A.
    Shugurov, K. Yu
    Maksimova, A. A.
    Vyacheslavova, E. A.
    Gudovskikh, A. S.
    TECHNICAL PHYSICS LETTERS, 2022, 48 (02) : 23 - 26
  • [43] Study of Schottky Diodes Based on an Array of Silicon Wires Obtained by Cryogenic Dry Etching
    A. I. Baranov
    D. A. Kudryashov
    A. V. Uvarov
    I. A. Morozov
    K. Yu. Shugurov
    A. A. Maksimova
    E. A. Vyacheslavova
    A. S. Gudovskikh
    Technical Physics Letters, 2022, 48 : 23 - 26
  • [44] Temperature influence on etching deep holes with SF6/O2 cryogenic plasma
    Craciun, G
    Blauw, MA
    van der Drift, E
    Sarro, PM
    French, PJ
    JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 2002, 12 (04) : 390 - 394
  • [45] Anisotropic etching in (311) Si to fabricate sharp resorbable polymer microneedles carrying neural electrode arrays
    Ceyssens, Frederik
    Welkenhuysen, Marleen
    Puers, Robert
    JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 2019, 29 (02)
  • [46] Optimum Condition of Anisotropic Plasma Etching for Improving Bending Properties of Ionic Polymer-Metal Composites
    Choi, N-J.
    Lee, H-K.
    Jung, S.
    Park, K-H.
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2010, 10 (05) : 3299 - 3303
  • [47] Stimuli-responsiveness based on anisotropic polymer architectures
    Lahann, Joerg
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2013, 245
  • [48] Precision bulk micromachining based on KOH anisotropic etching using ultrasonic agitation
    Chen, Jing
    Liu, Litian
    Li, Zhijian
    Tan, Zhimin
    Jiang, Qianshao
    Fang, Huajun
    Xu, Yang
    Liu, Yanxiang
    Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 2002, 23 (04): : 362 - 366
  • [49] Bi/In as patterning and masking layers for alkaline-based Si anisotropic etching
    Tu, YQ
    Chapman, G
    MICROMACHINING AND MICROFABRICATION PROCESS TECHNOLOGY VIII, 2003, 4979 : 87 - 98
  • [50] Wet Anisotropic Etching Characteristics of Si{111} in KOH-Based Solution
    Yu, Xiezheng
    Ye, Yinghua
    Zhu, Peng
    Wu, Lizhi
    Shen, Ruiqi
    Zhu, Chen-guang
    ACS OMEGA, 2025, 10 (03): : 2940 - 2948
12345