OPTICAL ABSORPTIVITY OF ION-BEAM IRRADIATED SILICON.

被引：0
|
作者：
Bhatia, K.L. [1 ]
Kraetschmer, W. [1 ]
Kalbitzer, S. [1 ]
机构：
[1] Max-Planck-Inst fuer Kernphysik, Heidelberg, West Ger, Max-Planck-Inst fuer Kernphysik, Heidelberg, West Ger
来源：
Applied physics. A, Solids and surfaces | 1988年 / A45卷 / 01期
关键词：
AMORPHIZED SILICON - ION-BEAM IRRADIATED SILICON - KRYPTON ION IMPLANTATION - NEON ION IMPLANTATION - OPTICAL ABSORPTIVITY;
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页码：69 / 72
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