HOT ELECTRON DISTRIBUTION AND TRANSPORT IN AlGaAs/GaAs/AlGaAs QUANTUM WELLS.

被引：0

作者：

Makiyama, K. ^{[1
]}

Inoue, M. ^{[1
]}

Ashida, M. ^{[1
]}

Cho, Y. ^{[1
]}

Iwai, Y. ^{[1
]}

Sasa, S. ^{[1
]}

Hiyamizu, S. ^{[1
]}

机构：

[1] Osaka Inst of Technology, Osaka, Jpn, Osaka Inst of Technology, Osaka, Jpn

来源：

Solid-State Electronics | 1987年 / 31卷 / 3-4期

关键词：

Electrons - Semiconducting gallium arsenide;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

We report experimental studies of hot electron distributions and energy relaxations in modulation doped AlGaAs/GaAs/AlGaAs multiple quantum wells. We have measured high field-dependent photoluminescence spectra with different MQWs. We discuss two-dimensional electron distributions and hot electron-phonon interactions, i. e. electron temperatures depending on two-dimensional electron density and quantum well structures. In the highly doped MQW, the electron temperature increased significantly from low electric fields. These experimental results are discussed from the aspect of two-dimensional electron-phon interactions.

引用

页码：371 / 374