Photoconductivity decay characteristics of undoped p-type CuGaS2

被引：0

作者：

Susaki, Masami ^{[1
]}

Horinaka, Hiromichi ^{[1
]}

Yamamoto, Nobuyuki ^{[1
]}

机构：

[1] Osaka Prefectural Coll of Technology, Saiwai, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1992年 / 31卷 / 2 A期

关键词：

Copper Compounds - Relaxation Processes - Semiconductor Materials--Charge Carriers;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Photoconductivity decay characteristics of undoped p-type CuGaS2 were measured at temperatures between 100 and 340 K to determine the carrier relaxation mechanisms correlated with some transition peaks in the excitation spectra. A direct recombination of free electrons and holes is observed for the intrinsic peak. For the extrinsic peak via a shallow donor, excited holes relax rapidly with a temperature-independent decay time of 5-8 μs, followed by electron decay with a temperature-dependent decay time. This results in a major recombination path between the conduction band and a shallow acceptor state. For the peak via a deep donor, a remarkable increase in decay time occurs above 250 K. This phenomenon is primarily caused by thermal emptying of the shallow acceptor state.

引用

页码：301 / 304