Photoconductivity decay characteristics of undoped p-type CuGaS2

被引:0
作者
Susaki, Masami [1 ]
Horinaka, Hiromichi [1 ]
Yamamoto, Nobuyuki [1 ]
机构
[1] Osaka Prefectural Coll of Technology, Saiwai, Japan
来源
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1992年 / 31卷 / 2 A期
关键词
Copper Compounds - Relaxation Processes - Semiconductor Materials--Charge Carriers;
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摘要
Photoconductivity decay characteristics of undoped p-type CuGaS2 were measured at temperatures between 100 and 340 K to determine the carrier relaxation mechanisms correlated with some transition peaks in the excitation spectra. A direct recombination of free electrons and holes is observed for the intrinsic peak. For the extrinsic peak via a shallow donor, excited holes relax rapidly with a temperature-independent decay time of 5-8 μs, followed by electron decay with a temperature-dependent decay time. This results in a major recombination path between the conduction band and a shallow acceptor state. For the peak via a deep donor, a remarkable increase in decay time occurs above 250 K. This phenomenon is primarily caused by thermal emptying of the shallow acceptor state.
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页码:301 / 304
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