Effect of strain relief on the Si1-x-yGexCy alloys grown by ultra-high vacuum/chemical vapor deposition

被引：0

作者：

Ye, Zhizhen ^{[1
]}

Zhang, Guoqiang ^{[1
]}

Qi, Zhen ^{[1
]}

Huang, Jingyun ^{[1
]}

Lu, Huanming ^{[1
]}

Zhao, Binghui ^{[1
]}

Wang, Lei ^{[1
]}

Yuan, Jun ^{[1
]}

机构：

[1] Zhejiang Univ, Hangzhou, China

来源：

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 2000年 / 21卷 / 03期

关键词：

Carbon - Chemical vapor deposition - Fourier transform infrared spectroscopy - Gallium - Strain - Transmission electron microscopy - X ray diffraction;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The ternary alloy of SiGeC has attracted much attention in recent years. The strain in the Si1-x-y Gex epilayer can be relieved and the band gap can be modified by the substitute of carbon. High quality Si1-x-yGexCy alloy with 2.2% C is grown at a relatively high temperature (760°C) on Si (100) wafer using Ultra-HIgh Vacuum/Chemical Vapor Deposition (UHV/CVD) system. The samples are investigated with high-resolution cross-sectional transmission electron microscope (HRTEM) and X-ray diffraction (XRD). Relatively flat growth profiles of the film are confirmed by secondary ion mass spectroscopy (SIMS). Fourier transform infrared spectroscopy (FTIR) is also used to testify that the carbon atoms are on the substitutional sites.

引用

页码：239 / 244