MOCVD GROWTH OF InP ON 4-INCH Si SUBSTRATE WITH GaAs INTERMEDIATE LAYER.

被引：0

作者：

Seki, Akinori ^{[1
]}

Konushi, Fumihiro ^{[1
]}

Kudo, Jun ^{[1
]}

Kakimoto, Seizo ^{[1
]}

Fukushima, Takashi ^{[1
]}

Koba, Masayoshi ^{[1
]}

机构：

[1] SHARP Corp, Tenri, Jpn, SHARP Corp, Tenri, Jpn

来源：

Japanese Journal of Applied Physics, Part 2: Letters | 1987年 / 26卷 / 10期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：1587 / 1589

共 50 条

[31] ATOMIC LAYER EPITAXY OF GAAS ON SI BY MOCVD [J].

KARAM, NH ;

HAVEN, VE ;

VERNON, SM ;

TRAN, JC ;

ELMASRY, NA .

III-V HETEROSTRUCTURES FOR ELECTRONIC / PHOTONIC DEVICES, 1989, 145 :331-336

[32] Impact of nucleation temperature on growth uniformity of GaN on 4-inch dome-patterned sapphire substrate [J].

Azmi, Nor Syafiqah ;

Mazlan, Muhammad Naim ;

Md Taib, Mohd Ikram ;

Ahmad, Mohd Anas ;

Samsuri, Mohd Shahrul Nizam ;

Mansor, Marwan ;

Hisyam, Muhammad Iznul ;

Abu Bakar, Ahmad Shuhaimi ;

Zainal, Norzaini .

Materials Science in Semiconductor Processing, 2024, 173

[33] GROWTH AND FABRICATION OF HIGH-QUALITY 4-INCH LARGE LITAO3 SAW SUBSTRATE [J].

YAMADA, K ;

OMI, T ;

MATSUMURA, S ;

NISHIMURA, T .

TOSHIBA REVIEW, 1985, (152) :30-33

[34] Impact of nucleation temperature on growth uniformity of GaN on 4-inch dome-patterned sapphire substrate [J].

Azmi, Nor Syafiqah ;

Mazlan, Muhammad Naim ;

Taib, Mohd Ikram Md ;

Ahmad, Mohd Anas ;

Samsuri, Mohd Shahrul Nizam ;

Mansor, Marwan ;

Hisyam, Muhammad Iznul ;

Abu Bakar, Ahmad Shuhaimi ;

Zainal, Norzaini .

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2024, 173

[35] Catalyst-free growth of InP nanowires on patterned Si (001) substrate by using GaAs buffer layer [J].

Li, Shiyan ;

Zhou, Xuliang ;

Kong, Xiangting ;

Li, Mengke ;

Mi, Junping ;

Pan, Jiaoqing .

JOURNAL OF CRYSTAL GROWTH, 2016, 440 :81-85

[36] INITIAL-STAGES OF MOCVD GROWTH OF GAAS ON INP [J].

MEDDEB, J ;

PITAVAL, M ;

AZOULAY, R ;

DRAIDIA, N .

JOURNAL DE PHYSIQUE III, 1992, 2 (03) :287-293

[37] PROBLEMS IN GROWTH OF 4-INCH WIDE SILICON RIBBON CRYSTALS [J].

MATSUDA, M ;

KURODA, E .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 :17-20

[38] Growth habits of 3 and 4-inch langasite single crystals [J].

Uda, S ;

Wang, SQ ;

Konishi, N ;

Inaba, H ;

Harada, J .

JOURNAL OF CRYSTAL GROWTH, 2002, 237 :707-713

[39] Buffer breakdown voltage of AlGaN/GaN HFET on a 4 inch Si(111) substrate grown by MOCVD [J].

Iwami, Masayuki ;

Kato, Sadahiro ;

Satoh, Yoshihiro ;

Sasaki, Hitoshi ;

Yoshida, Seikoh .

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4 NO 7 2007, 2007, 4 (07) :2658-+

[40] AUGER-ELECTRON SPECTROSCOPY STUDY OF GAAS LAYER GROWTH ON INP SUBSTRATE [J].

MATSUI, Y ;

HAYASHI, H ;

YOSHIDA, K .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (01) :219-221

← 1 2 3 4 5 →