ELECTROLYTE ELECTRIC FIELD MODULATED ELLIPSOMETRIC SPECTRUM OF GaAs.

被引：0
|
作者：
Jia Gang
机构：
来源：
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 1984年 / 5卷 / 01期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
28
引用
收藏
页码：40 / 47
相关论文
共 50 条
  • [1] IN SITU ELLIPSOMETRIC STUDY OF ANODIZATION PROCESS IN GaAs.
    Yamagishi, Choho
    Moritani, Akihiro
    Nakai, Junkichi
    Technology Reports of the Osaka University, 1980, 30 (1517-1550): : 109 - 115
  • [2] ORIENTATION OF THE FIELD IN THE SPONTANEOUS ELECTROABSORPTION IN GaAs.
    Akopyan, R.M.
    Berozashvili, Yu.N.
    Dzhanelidze, M.B.
    Dundua, A.V.
    1600, (16):
  • [3] DEPENDENCE OF THE ELECTROABSORPTION SIGNAL ON THE ELECTRIC FIELD IN CRYSTALS OF HIGH-RESISTANCE COMPENSATE GaAs.
    Georgobiani, A.N.
    Ivanov, L.N.
    Todua, P.A.
    Soviet Physics - Lebedev Institute Reports (English translation of Kratkie Soobshcheniya po Fizike: Sbornik, AN SSSR, Fizicheskii Inst. im. P.N. Lebedeva), 1979, (02): : 9 - 12
  • [4] CHARACTERIZATION OF THE ILLUMINATED GAAS ELECTROLYTE INTERFACE BY MEANS OF ELLIPSOMETRIC MEASUREMENTS
    LINGIER, S
    GOMES, WP
    PHOTOCONVERSION PROCESSES FOR ENERGY AND CHEMICALS, 1989, 5 : 118 - 128
  • [5] ELECTRIC BIREFRINGENCE AND ELLIPSOMETRIC SPECTROSCOPY OF THE SEMICONDUCTOR-ELECTROLYTE INTERFACE
    ANG, PGP
    SAMMELLS, AF
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (03) : C109 - C109
  • [6] FIELD ENHANCEMENT OF THE QUENCHING OF THE IMPURITY PHOTOCONDUCTIVITY OF CHROMIUM-DOPED GaAs.
    Peka, G.P.
    Mirets, L.Z.
    1600, (07):
  • [7] SCATTERING BY A RANDOM FIELD OF ELASTIC DEFORMATIONS IN NEUTRON-BOMBARDED GaAs.
    Mironov, A.G.
    Soviet physics journal, 1987, 30 (06): : 488 - 490
  • [8] ELECTRIC MODULATED REFLECTANCE AND ELLIPSOMETRIC STUDIES ON ORIENTATION AND DESORPTION OF ORGANIC MOLECULES AT ELECTRODES
    CONWAY, BE
    GOTTESFE.S
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (03) : C102 - &
  • [9] Magnetic field-modulated photo-thermo-electric effect in Fe/GaAs film
    Qiao, Shuang
    Liu, Jihong
    Yan, Guoying
    Zhao, Jianhua
    Zhang, Xinhui
    Wang, Shufang
    Fu, Guangsheng
    APPLIED PHYSICS LETTERS, 2015, 107 (18)
  • [10] Effect of electric field and acceptor position on the energy spectrum of GaAs/AlAs quantum dot
    Bilynskyi, I. V.
    Leshko, R. Ya
    Metsan, H. O.
    Slusarenko, M. A.
    PHYSICA B-CONDENSED MATTER, 2022, 642
12345