Electron-beam-induced oxidation for single-electron devices

被引：0

作者：

Matsutani, Masahiro ^{[1
]}

Wakaya, Fujio ^{[1
]}

Takaoka, Sadao ^{[1
]}

Murase, Kazuo ^{[1
]}

Gamo, Kenji ^{[1
]}

机构：

[1] Osaka Univ, Osaka, Japan

来源：

| 1997年 / JJAP, Tokyo, Japan卷 / 36期

关键词：

Experimental; (EXP);

D O I：

暂无

中图分类号：

学科分类号：

摘要：

A selective-area oxidation technique using electron beam (e-beam) irradiation with a mixture of O2 and H2O gases is studied for the fabrication of small tunnel junctions using Si and Cr. Auger electron spectroscopy clearly shows the existence of Si-O bonding at e-beam-irradiated Si surfaces. The height of SiOx is measured by atomic-force-microscope observation, and it is confirmed that the thickness of SiOx can be controlled at a nanometer scale. The line-dose dependence of the resistance of the Cr/CrOx/Cr structure was measured at room temperature and 77 K, and a step-function-like dependence was observed, which indicates that the oxidation takes place over the entire thickness of the 3-nm-thick Cr film. Nonlinear current-voltage characteristics were observed, which suggest that a thin tunneling barrier of CrOx can be realized. The selective-area oxidation technique can be applied to the fabrication of small tunneling junctions.

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