Evaluation of parameters in atmospheric-pressure chemical vapor deposition of borophosphosilicate glass using tetraethylorthosilicate and ozone

被引：0
|
作者：
Nishimoto, Y. [1 ]
Tokumasu, N. [1 ]
Maeda, K. [1 ]
机构：
[1] Semiconductor Process Lab. Co., Ltd., 13-29 Konan 2-chome, Minato-Ku, Tokyo 108-0075, Japan
来源：
| 2001年 / Japan Society of Applied Physics卷 / 40期
关键词：
Atmospheric pressure chemical vapor deposition - Borophosphosilicate glass - Tetraethylorthosilicate - Thermal shrinkage;
D O I：
10.1143/jjap.40.l1078
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [41] IMPROVED ATMOSPHERIC-PRESSURE CHEMICAL-VAPOR-DEPOSITION SYSTEM FOR DEPOSITING SILICA AND PHOSPHOSILICATE GLASS THIN-FILMS
    WINKLE, LW
    NELSON, CW
    SOLID STATE TECHNOLOGY, 1981, 24 (10) : 123 - 128
  • [42] LASER-INDUCED CHEMICAL-VAPOR-DEPOSITION OF TIN COATINGS AT ATMOSPHERIC-PRESSURE
    CROONEN, YH
    VERSPUI, G
    JOURNAL DE PHYSIQUE IV, 1993, 3 (C3): : 209 - 215
  • [43] Atmospheric-Pressure Plasma-Enhanced Chemical Vapor Deposition of Hybrid Silica Membranes
    Nagasawa, Hiroki
    Yamamoto, Yuta
    Kanezashi, Masakoto
    Tsuru, Toshinori
    JOURNAL OF CHEMICAL ENGINEERING OF JAPAN, 2018, 51 (09) : 732 - 739
  • [44] Threefold atmospheric-pressure annealing for suppressing graphene nucleation on copper in chemical vapor deposition
    Suzuki, Seiya
    Nagamori, Takashi
    Matsuoka, Yuki
    Yoshimura, Masamichi
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2014, 53 (09)
  • [45] Various Shapes of ZnO and CdO Nanostructures Grown by Atmospheric-Pressure Chemical Vapor Deposition
    Terasako, Tomoaki
    Fujiwara, Tetsuro
    Yagi, Masakazu
    Shirakata, Sho
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2011, 50 (01)
  • [46] THE ORGANO-METALLIC CHEMICAL VAPOR-DEPOSITION OF ZNS AND ZNSE AT ATMOSPHERIC-PRESSURE
    WRIGHT, PJ
    COCKAYNE, B
    JOURNAL OF CRYSTAL GROWTH, 1982, 59 (1-2) : 148 - 154
  • [47] Rapid formation of zinc oxide films by an atmospheric-pressure chemical vapor deposition method
    Kamata, Kiichiro
    Nishino, Junichi
    Ohshio, Shigeo
    Maruyama, Kazunori
    Ohtuki, Motohiko
    Journal of the American Ceramic Society, 1994, 77 (02): : 505 - 508
  • [48] Luminescence mechanism of SiOx films grown by atmospheric-pressure halide chemical vapor deposition
    Huang, Yu-Hsiang
    Li, Zhen-Yu
    Chen, Meng-Chu
    Ku, Chien-Te
    Chen, Ying-Ru
    Uen, Wu-Yih
    Lin, Chia-Hung
    Lan, Shan-Ming
    Yang, Tsun-Neng
    Shen, Ji-Lin
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (11): : 7542 - 7544
  • [49] VANADOCENE USED AS A PRECURSOR FOR THE CHEMICAL-VAPOR-DEPOSITION OF VANADIUM CARBIDE AT ATMOSPHERIC-PRESSURE
    POIRIER, L
    RICHARD, O
    DUCARROIR, M
    NADAL, M
    TEYSSANDIER, F
    LAURENT, F
    CYRATHIS, O
    CHOUKROUN, R
    VALADE, L
    CASSOUX, P
    THIN SOLID FILMS, 1994, 249 (01) : 62 - 69
  • [50] ATMOSPHERIC-PRESSURE CHEMICAL VAPOR-DEPOSITION OF SI AND SIGE AT LOW-TEMPERATURES
    SEDGWICK, TO
    AGNELLO, PD
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1992, 10 (04): : 1913 - 1919
12345