Evaluation of parameters in atmospheric-pressure chemical vapor deposition of borophosphosilicate glass using tetraethylorthosilicate and ozone

被引：0
|
作者：
Nishimoto, Y. [1 ]
Tokumasu, N. [1 ]
Maeda, K. [1 ]
机构：
[1] Semiconductor Process Lab. Co., Ltd., 13-29 Konan 2-chome, Minato-Ku, Tokyo 108-0075, Japan
来源：
| 2001年 / Japan Society of Applied Physics卷 / 40期
关键词：
Atmospheric pressure chemical vapor deposition - Borophosphosilicate glass - Tetraethylorthosilicate - Thermal shrinkage;
D O I：
10.1143/jjap.40.l1078
中图分类号：
学科分类号：
摘要：
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