Ion etching effects at interfaces of semiconductor III-V/III-V and II-VI/III-V heterostructures in SIMS depth profiling

被引：0
|
作者：
Konarski, P. [1 ]
Herman, M.A. [1 ]
Kozhukhov, A.V. [1 ]
机构：
[1] Inst of Vacuum Technology, Warszawa, Poland
来源：
Electron Technology (Warsaw) | 1996年 / 29卷 / 2-3期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：277 / 282
相关论文
共 50 条
  • [1] ON THE ETCHING OF III-V AND II-VI COMPOUNDS
    WOLFF, GA
    FRAWLEY, JJ
    HIETANEN, JR
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (08) : C203 - C203
  • [2] MICROSCOPIC CAPACITORS AND NEUTRAL INTERFACES IN III-V/IV/III-V SEMICONDUCTOR HETEROSTRUCTURES
    BIASIOL, G
    SORBA, L
    BRATINA, G
    NICOLINI, R
    FRANCIOSI, A
    PERESSI, M
    BARONI, S
    RESTA, R
    BALDERESCHI, A
    PHYSICAL REVIEW LETTERS, 1992, 69 (08) : 1283 - 1286
  • [3] PROPERTIES OF II-VI/III-V HETEROVALENT INTERFACES
    GUNSHOR, RL
    KOBAYASHI, M
    OTSUKA, N
    NURMIKKO, AV
    JOURNAL OF CRYSTAL GROWTH, 1991, 115 (1-4) : 652 - 659
  • [4] Porosification of III-V and II-VI Semiconductor Compounds
    Monaico, Eduard
    Colibaba, Gleb
    Nedeoglo, Dmitrii
    Nielsch, Kornelius
    JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, 2014, 9 (02) : 307 - 311
  • [5] Ferromagnetism in III-V and II-VI semiconductor structures
    Dietl, T
    Ohno, H
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2001, 9 (01): : 185 - 193
  • [6] CHANNELING STUDIES OF III-V/III-V AND IV/III-V SEMICONDUCTOR MODULATED STRUCTURES
    CHANG, CA
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02): : 346 - 351
  • [7] Pore etching in III-V and II-VI semiconductor compounds in neutral electrolyte
    Tiginyanu, I. M.
    Ursaki, V. V.
    Monaico, E.
    Foca, E.
    Foell, H.
    ELECTROCHEMICAL AND SOLID STATE LETTERS, 2007, 10 (11) : D127 - D129
  • [8] Ferromagnetic III-V and II-VI semiconductors
    Dietl, T
    Ohno, H
    MRS BULLETIN, 2003, 28 (10) : 714 - 719
  • [9] Luminescence of II-VI and III-V nanostructures
    Mynbaev, K. D.
    Shilyaev, A. V.
    Semakova, A. A.
    Bykhanova, E. V.
    Bazhenov, N. L.
    OPTO-ELECTRONICS REVIEW, 2017, 25 (03) : 209 - 214
  • [10] Hydrogen in III-V and II-VI semiconductors
    McCluskey, MD
    Haller, EE
    HYDROGEN IN SEMICONDUCTORS II, 1999, 61 : 373 - 440
12345