Direct determination of In-dimer orientation of Si(001)2×3-In and 2×2-In surfaces

被引:0
|
作者
Yeom, H.W. [1 ]
Abukawa, T. [1 ]
Nakamura, M. [1 ]
Chen, X. [1 ]
Suzuki, S. [1 ]
Sato, S. [1 ]
Sakamoto, K. [1 ]
Sakamoto, T. [1 ]
Kono, S. [1 ]
机构
[1] Tohoku Univ, Sendai, Japan
来源
Surface Science | 1995年 / 340卷 / 1-2期
关键词
549.3; Others; including Bismuth; Boron; Cadmium; Cobalt; Mercury; Niobium; Selenium; Silicon; Tellurium and Zirconium - 712.1 Semiconducting Materials - 723.5 Computer Applications - 931.2 Physical Properties of Gases; Liquids and Solids;
D O I
暂无
中图分类号
学科分类号
摘要
20
引用
收藏
相关论文
共 50 条
  • [41] Tuning of structural and dielectric properties of Gd2O3 grown on Si(001)
    Gribisch, P.
    Fissel, A.
    JOURNAL OF APPLIED PHYSICS, 2020, 128 (05)
  • [42] Formation of a strontium buffer layer on Si(001) by pulsed-laser deposition through the Sr/Si(001)(2 x 3) surface reconstruction
    Klement, D.
    Spreitzer, M.
    Suvorov, D.
    APPLIED PHYSICS LETTERS, 2015, 106 (07)
  • [43] Growth mechanism of epitaxial SrTiO3 on a (1 x 2) + (2 x 1) reconstructed Sr(1/2 ML)/Si(001) surface
    Spreitzer, Matjaz
    Klement, Dejan
    Egoavil, Ricardo
    Verbeeck, Jo
    Kovac, Janez
    Zaloznik, Anze
    Koster, Gertjan
    Van Tendeloo, Gustaaf
    Suvorov, Danilo
    Rijnders, Guus
    JOURNAL OF MATERIALS CHEMISTRY C, 2020, 8 (02) : 518 - 527
  • [44] Photoluminescence and Photoreflectance Studies in Si/β-FeSi2/Si(001) Double Heterostructure
    Yoneda, K.
    Terai, Y.
    Noda, K.
    Miura, N.
    Fujiwara, Y.
    ASIA-PACIFIC CONFERENCE ON SEMICONDUCTING SILICIDES SCIENCE AND TECHNOLOGY TOWARDS SUSTAINABLE OPTOELECTRONICS (APAC-SILICIDE 2010), 2011, 11 : 185 - 188
  • [45] Observation of Chemisorbed O2 Molecule at SiO2/Si(001) Interface During Si Dry Oxidation
    Tsuda, Yasutak
    Yoshigoe, Akitaka
    Ogawa, Shuich
    Sakamoto, Tetsuya
    Takakuwa, Yuji
    E-JOURNAL OF SURFACE SCIENCE AND NANOTECHNOLOGY, 2023, 21 (01) : 30 - 39
  • [46] Structure of Pb dimer chains on Si(100)2 x 1
    Juré, L
    Magaud, L
    Mallet, P
    Veuillen, JY
    SURFACE SCIENCE, 2001, 482 : 1343 - 1349
  • [47] Atomic structure of ultrathin Co layer on Si(001)(2 x 1) at room temperature
    Cho, WS
    Kim, JY
    Park, NG
    Lyo, IW
    Jeong, K
    Kim, SS
    Choi, DS
    Whang, CN
    Chae, KH
    SURFACE SCIENCE, 2000, 453 (1-3) : L309 - L314
  • [48] The influence of orientation and morphology on the passivation of crystalline silicon surfaces by Al2O3
    Black, Lachlan E.
    Kho, Teng C.
    McIntosh, Keith R.
    Cuevas, Andres
    PROCEEDINGS OF THE 4TH INTERNATIONAL CONFERENCE ON CRYSTALLINE SILICON PHOTOVOLTAICS (SILICONPV 2014), 2014, 55 : 750 - 756
  • [49] An STM study of the Si(001)(2 x 4)-Dy surface
    Liu, BZ
    Nogami, J
    SURFACE SCIENCE, 2001, 488 (03) : 399 - 405
  • [50] Thin PTCDA films on Si(001): 2. Electronic structure
    Gustafsson, JB
    Moons, E
    Widstrand, SM
    Gurnett, M
    Johansson, LSO
    SURFACE SCIENCE, 2004, 572 (01) : 32 - 42