Formation of n+p shallow junction by As+ implantation through CoSi2 film

被引：0
|
作者：
Chen, Bin-Shing
Chen, Mao-Chieh
机构：
来源：
| 1600年 / American Inst of Physics, Woodbury, NY, USA卷 / 74期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [31] FORMATION OF IMBEDDED COSI2 LAYERS BY HIGH-ENERGY IMPLANTATION AND ANNEALING
    ZARING, C
    JIANG, H
    OSTLING, M
    WHITLOW, HJ
    PETERSSON, CS
    PHIL, T
    VIDE-SCIENCE TECHNIQUE ET APPLICATIONS, 1987, 42 (236): : 55 - 57
  • [32] FORMATION OF IMBEDDED CoSi2 LAYERS BY HIGH ENERGY IMPLANTATION AND ANNEALING.
    Zaring, C.
    Jiang, H.
    Oestling, M.
    Whitlow, H.J.
    Petersson, C.S.
    Phil, T.
    Vide, les Couches Minces, 1987, 42 (236): : 55 - 57
  • [33] FORMATION OF COSI2 IN SIMOX WAFERS BY HIGH-DOSE COBALT IMPLANTATION
    SJOREEN, TP
    JEBASINSKI, R
    SCHMIDT, K
    MANTL, S
    HOLZBRECHER, H
    SPEIER, W
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1992, 12 (1-2): : 129 - 133
  • [34] 固相外延CoSi2薄膜作为扩散源形成n＋p浅结技术研究
    房华，李炳宗，吴卫军，邵凯，姜国宝，顾志光，黄维宁，刘平，周祖尧，朱剑豪
    半导体学报, 1996, (04) : 305 - 312
  • [35] FORMATION OF COSI2/SI LAYER SYSTEMS BY CO+ DOUBLE IMPLANTATION
    WITZMANN, A
    SCHIPPEL, S
    ZENTGRAF, A
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1992, 12 (1-2): : 139 - 143
  • [36] Formation and characterization of NiSi-silicided n+p shallow junctions
    Wang, CC
    Chen, MC
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (3A): : 1582 - 1587
  • [37] SELF-ALIGNED SILICIDED (PTSI AND COSI2) ULTRA-SHALLOW P+/N JUNCTIONS
    BROADBENT, EK
    DELFINO, M
    MORGAN, AE
    SADANA, DK
    MAILLOT, P
    IEEE ELECTRON DEVICE LETTERS, 1987, 8 (07) : 318 - 320
  • [38] Thermal stability of rapidly annealed CoSi2/n-GaAs and CoSi2/p-InP Schottky contacts
    Eftekhari, G
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1996, 14 (04): : 2662 - 2665
  • [39] Intrinsic junction leakage generated by cobalt in-diffusion during COSi2 formation
    Tsuchiaki, M
    Hongo, C
    Takashima, A
    Ohuchi, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2002, 41 (4B): : 2437 - 2444
  • [40] Pinhole formation in solid phase epitaxial film of CoSi2 on Si(111)
    Ruan, L
    Chen, DM
    APPLIED PHYSICS LETTERS, 1998, 72 (26) : 3464 - 3466
12345