Dephasing in open quantum dots

被引:0
|
作者
Stanford Univ, Stanford, United States [1 ]
机构
来源
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [1] Dephasing in open quantum dots
    Huibers, AG
    Switkes, M
    Marcus, CM
    Campman, K
    Gossard, AC
    PHYSICA B-CONDENSED MATTER, 1998, 249 : 348 - 352
  • [2] Dephasing in open quantum dots
    Huibers, AG
    Switkes, M
    Marcus, CM
    Campman, K
    Gossard, AC
    PHYSICAL REVIEW LETTERS, 1998, 81 (01) : 200 - 203
  • [3] Theory of dephasing by external perturbation in open quantum dots
    Vavilov, MG
    Aleiner, IL
    PHYSICAL REVIEW B, 1999, 60 (24) : 16311 - 16314
  • [4] A model for dephasing in quantum dots
    Lewenkopf, CH
    CHAOS SOLITONS & FRACTALS, 2003, 16 (03) : 449 - 456
  • [5] Geometrical spin dephasing in quantum dots
    San-Jose, Pablo
    Zarand, Gergely
    Shnirman, Alexander
    Schoen, Gerd
    PHYSICAL REVIEW LETTERS, 2006, 97 (07)
  • [6] Dephasing in InAs/GaAs quantum dots
    Borri, P
    Langbein, W
    Mork, J
    Hvam, JM
    Heinrichsdorff, F
    Mao, MH
    Bimberg, D
    PHYSICAL REVIEW B, 1999, 60 (11): : 7784 - 7787
  • [7] Dephasing of biexcitons in InGaAs quantum dots
    Borri, P
    Langbein, W
    Schneider, S
    Woggon, U
    Sellin, RL
    Ouyang, D
    Bimberg, D
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2003, 238 (03): : 593 - 600
  • [8] Excitation, dynamics and dephasing in quantum dots
    Stoneham, AM
    McKinnon, BA
    JOURNAL OF PHYSICS-CONDENSED MATTER, 1998, 10 (34) : 7665 - 7677
  • [9] Dephasing times in closed quantum dots
    Eisenberg, E
    Held, K
    Altshuler, BL
    PHYSICAL REVIEW LETTERS, 2002, 88 (13) : 4 - 136801
  • [10] Dephasing processes in InGaAs quantum dots
    Borri, P
    Langbein, W
    Schneider, S
    Woggon, U
    Sellin, RL
    Ouyang, D
    Bimberg, D
    PHYSICS OF SEMICONDUCTORS 2002, PROCEEDINGS, 2003, 171 : 205 - 212